| PART |
Description |
Maker |
| 50S116T 50S116T-5 50S116T-6 50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE TECHNOLOGY CO., LTD.
|
| W981616BH |
SDRAM 1Mx16
512K ′ 2 BANKS ′ 16 BITS SDRAM
|
Winbond Electronics
|
| W9816G6IH-5 W9816G6IH-6 W9816G6IH-6I W9816G6IH-7 W |
512K 】 2 BANKS 】 16 BITS SDRAM
|
Winbond
|
| W9816G6IB |
512K ?2 BANKS ?16 BITS SDRAM
|
Winbond
|
| W9816G6CH-7 |
512K ??2 BANKS ??16 BITS SDRAM
|
WINBOND ELECTRONICS CORP
|
| IS45S32200C1-7BLA1 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|
| IS42S32200B-6T IS42S32200B-6TL IS42S32200B-6TI IS4 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc.
|
| MT48LC1M16A1 |
512K x 16 x 2 banks IT SDRAM(512K x 16 x 2同步动态RAM（工业温度）)
|
Micron Technology, Inc.
|
| W9864G6JB-6 W9864G6JB-6I W9864G6JB-6A |
1M X 4 BANKS X 16 BITS SDRAM
|
Winbond
|
| W9825G6DH W9825G6DH-6 W9825G6DH-6C W9825G6DH-6I W9 |
4M × 4 BANKS × 16 BITS SDRAM
|
Winbond
|
| W9864G6GH |
1M X 4 BANKS X 16 BITS SDRAM
|
Winbond
|
